Navigation Menu 
| Semiconductor Properties...
|
| Microfabrication Processes...
|
|
Semiconductor Properties
Useful information related to semiconductor wafers, resistivity, mobility, impurity doping (diffusion, ion implantation, ion implantation houses), oxide growth, crystal planes, silicon dioxide and nitride films, chemical etching, optoelectronics, contact resistance, and much more!
Calculators & Interactive Graphs
Enter the Miller indicies of any two crystal planes to determine the angle between them.
Calculate impurity and dopant concentrations at various depths in silicon, gallium arsenide, and other semiconductor substrates for intrinsic diffusion.
This calculator includes both constant-total and constant-surface concentration profiles! Interactive graph plots the impurity concentration vs. substrate depth or diffusion profile for various input parameters such as annealing temperature and time.
Given an electric field, you can calculate the Breakdown Coefficients along with the gain in Silicon, Indium Phosphide, and Gallium Arsenide semiconductors.
Calculate the ion concentration at various depths in different substrates for Arsenic, Boron, and Phosphorous. Interactive graph plots the impurity concentration vs. substrate depth for different substrates, dopants, ion energies, and ion doses.
Calculates energy barrier height and depletion layer width for any combination of over 70 metals and 8 semiconductors.
Input the initial and desired thickness, temperature, crystal orientation, and environment to calculate the oxide growth time.
Enter the initial thickness, temperature, crystal orientation, environment, and time to determine final thickness of thermally grown oxide on Si.
Calculate the projected range and straggle for ion implantation of various dopants, substrates, and ionization energies.
Calculates depletion layer width, built-in voltage, maximum field, and depletion capacitance for pn junctions in 4 different semiconductors
and with 2 different doping profiles.
Calculate the mobility and resistivity of silicon for different doping concentrations of Arsenic, Boron, and Phosphorous. Interactive graph plots resistivity vs. impurity concentration for selected dopants.
Charts
Determines the visible color for silicon dioxide and nitride films given the film thickness and viewing angle.
General Information
A reference to electromagnetic, atomic, physico-chemical, x-ray and general physical constants. The
constant values listed are the CODATA 2003 recommended values accepted by the National Institute of Standards
and Technology.
This guide contains information on the various characteristics and properties of semiconductor wafers including:
crystallographic information on silicon and other semiconductors, metallurgical fabrication tutorials, wafer quality descriptions,
and Industry standards. Wafer providers, processing centers, a glossary and other various educational information.
A simple guide to understanding the sizes used in the BYU cleanroom.
Definitions of photolithography and other cleanroom terms
An easy to follow tutorial on the fabrication of an N-MOS Transistor.
This table shows thermal properties for various metals.
This table shows the CTE for various common semiconductor materials.
This guide tabulates properties of common thin film materials including density, Z-ratio, melting point, vapor pressures.
Preferred evaporation methods and crucible liners are also collected.
Instructions on how to measure metal-semiconductor contact resistance using the transmission line method (TLM).
|
